| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:68.86 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | ||
N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V 文件:165.53 Kbytes 頁數(shù):5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
N-CHANNEL POWER MOSFETS FEATURES ? Low RDs 文件:209.79 Kbytes 頁數(shù):5 Pages | SAMSUNG 三星 | SAMSUNG | ||
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:68.86 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | ||
Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:135.19 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
HEXFET TRANSISTORS 250V 1.1 ohm HEXFET 文件:398.88 Kbytes 頁數(shù):6 Pages | IRF | IRF | ||
HEXFET TRANSISTORS 250V 1.1 ohm HEXFET 文件:398.88 Kbytes 頁數(shù):6 Pages | IRF | IRF | ||
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 200 Volt, 0.40? HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis tors. The efficient geometry achieves very low on state resistance combined with high transconductance. HEXFET transistors also feature all of the well-es tablish advantag 文件:151.04 Kbytes 頁數(shù):7 Pages | IRF | IRF | ||
N-CHANNEL POWER MOSFETS FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fsat switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (Standard) 文件:212.01 Kbytes 頁數(shù):5 Pages | SAMSUNG 三星 | SAMSUNG | ||
N-Channel Power MOSFETs, 12A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V 文件:177.14 Kbytes 頁數(shù):6 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD |
技術(shù)參數(shù)
- OPN:
IRF100B201
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
100 V
- RDS (on) @10V max:
4.2 m?
- ID @25°C max:
192 A
- QG typ @10V:
170 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
263 |
7000 |
詢價 | |||
20+ |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||||
IR |
TO |
1100 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
英飛凌 |
23+ |
TO-220 |
30000 |
原裝正品,假一罰十 |
詢價 | ||
0 |
詢價 | ||||||
IR-韓國產(chǎn) |
25+ |
TO-220 |
16402 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 |
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