<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
        1. <del id="5lvfi"></del>

          首頁 >IRF1407LPBF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF1407LPbF

          HEXFET? Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:578.95 Kbytes 頁數(shù):12 Pages

          INFINEON

          英飛凌

          IRF1407LPBF

          HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:258.07 Kbytes 頁數(shù):12 Pages

          IRF

          IRF1407LPbF

          HEXFET? Power MOSFET

          Infineon

          英飛凌

          IRF1407PBF

          HEXFET? Power MOSFET

          Description This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

          文件:167.92 Kbytes 頁數(shù):10 Pages

          IRF

          IRF1407PBF

          Advanced Process Technology

          文件:271.93 Kbytes 頁數(shù):9 Pages

          IRF

          IRF1407S

          Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:159.79 Kbytes 頁數(shù):11 Pages

          IRF

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          24+
          TO-262-3
          2010
          詢價
          IR
          24+
          TO-262
          5000
          只做原裝公司現(xiàn)貨
          詢價
          International Rectifier
          2022+
          1
          全新原裝 貨期兩周
          詢價
          IR
          25+
          TO-262
          10000
          原裝現(xiàn)貨假一罰十
          詢價
          INTERNATIONAL RECTIFIER
          25+
          119
          公司優(yōu)勢庫存 熱賣中!
          詢價
          IR
          22+
          TO-262
          6000
          終端可免費(fèi)供樣,支持BOM配單
          詢價
          IR
          23+
          TO-262
          8000
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價
          IR
          23+
          TO-262
          7000
          詢價
          IR
          24+
          TO-262
          80000
          只做自己庫存 全新原裝進(jìn)口正品假一賠百 可開13%增
          詢價
          IR
          TO-220
          3200
          原裝長期供貨!
          詢價
          更多IRF1407LPBF供應(yīng)商 更新時間2026-1-21 14:31:00
            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                1. <del id="5lvfi"></del>
                  亚洲电影在线播放 | 狠狠综合久久 | 国产又爽 又黄 在线看 | 人人澡人人爽人人精品 | 天天噪天天射天天拍 |