N-Channel Power MOSFETs, 27 A, 60-100V

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FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

N-CHANNEL POWER MOSFETS

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SAMSUNG

三星

28A, 100V, 0.077 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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INTERSIL

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

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IRF

High Power,High Speed Applications

DESCRIPTION ? Drain Current ID=27A@ TC=25℃ ? Drain Source Voltage- : VDSS= 100V(Min) ? Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ? High Power,High Speed Applications APPLICATIONS ? Switching power supplies

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ISC

無錫固電

N-Channel Power MOSFETs, 27 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-CHANNEL POWER MOSFET

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SEME-LAB

Repetitive Avalanche Ratings

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IRF

HiRel MOSFETs

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Infineon

英飛凌

28A, 100V, 0.077 Ohm, N-Channel Power MOSFET

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