N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件：180.59 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件：211.72 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

N-Channel MOSFET Transistor

文件：198.96 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Trans MOSFET 60V 14A 3-Pin(2+Tab) TO-3

NJS

N-Channel MOSFET Transistor

? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.036? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.58 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：96.76 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：156.84 Kbytes 頁數(shù)：10 Pages

IRF

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件：1.16562 Mbytes 頁數(shù)：10 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：725.79 Kbytes 頁數(shù)：11 Pages

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：156.84 Kbytes 頁數(shù)：10 Pages

IRF