isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=94A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.7mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：353.92 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

30V N-Channel MOSFET

Features VDS (V) = 30V ID = 35A (VGS = 10V) RDS(ON) =5.7mW (VGS = 10V) RDS(ON) =6.8mW (VGS = 4.5V)

文件：651.96 Kbytes 頁(yè)數(shù)：7 Pages

UMW

友臺(tái)半導(dǎo)體

N-channel Advanced Mode Power MOSFET

Features ? VDS= 40V, ID= 150A RDS(ON)

文件：977.91 Kbytes 頁(yè)數(shù)：4 Pages

BYCHIP

百域芯

30V N-Channel MOSFET

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/ DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features VDS (V) =

文件：345.25 Kbytes 頁(yè)數(shù)：7 Pages

EVVOSEMI

翊歐

N-Channel 30-V (D-S) MOSFET

文件：1.01141 Mbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel PowerTrench MOSFET

文件：130.1 Kbytes 頁(yè)數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET

文件：622.66 Kbytes 頁(yè)數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?strong>FDD8896；Package：TO-252AA；N-Channel PowerTrench? MOSFET 30V, 94A, 5.7mΩ

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ? rD

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ONSEMI

安森美半導(dǎo)體

N 溝道，PowerTrench? MOSFET， 30V，94A，4.7mΩ

此N溝道MOSFET是專(zhuān)為使用同步或傳統(tǒng)開(kāi)關(guān)PWM控制器來(lái)改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計(jì)的。 已針對(duì)低柵極電荷、低rDS(ON) 和高速開(kāi)關(guān)進(jìn)行了優(yōu)化。 ?RDS(ON) = 5.7 mΩ, VGS = 10V, ID = 35V\n?RDS(ON) = 6.8 mΩ, VGS = 4.5V, ID = 35V\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?低柵極電荷\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

絲印：8896；Package：TO-252-3L；N-Channel Enhancement Mode Power MOSFET

Features | + 30V,90A Rosin 3.88m0@Vas = 10V (Typ) + Advanced Trench Technology ? Provide Excellent Rosow and Low Gate Charge + Lead free product is acquired |

文件：2.88654 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子