N-Channel PowerTrench MOSFET 40V, 28A, 24mOHM

General Description This N-Channel MOSFET hasbeen designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on). Featu

文件：345.38 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=28A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =24mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：331.32 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel PowerTrench? MOSFET

文件：412.58 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

N 溝道 PowerTrench? MOSFET 40V，28A，24mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進DC/DC轉(zhuǎn)換器整體功效而設計的。已針對低柵極電荷、高速開關(guān)和極低rDS(on)進行了優(yōu)化。 ?最大rDS(on) = 24mΩ（VGS = 10V, ID = 9A）\n?最大值 rDS(on) = 30mΩ（VGS = 4.5V, ID = 7A）\n?低柵極電荷\n?快速開關(guān)\n?高性能溝道技術(shù)可實現(xiàn)極低的 lowrDS(on) \n?符合 RoHS 標準;

ONSEMI

安森美半導體

N-Channel PowerTrench? MOSFET

文件：412.58 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體