絲?。?strong>FDD6685；Package：TO-252；- 30V P-Channel

General Description This P-Channel MOSFET has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capa

文件：389.79 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V –25V). Features · –40A, –30 V. RDS(ON)= 20

文件：116.54 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

P-channel Enhancement Mode Power MOSFET

Features ? VDS= -30V, ID= -30A RDS(ON)

文件：905.37 Kbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

P-Channel 30-V (D-S) MOSFET

文件：1.02648 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

30V，P 溝道，PowerTrench? MOSFET，-40A，20mΩ

此P溝道MOSFET是采用飛兆半導體先進的PowerTrench工藝生產(chǎn)的穩(wěn)固柵極版本。 它已針對需要大范圍柵極驅(qū)動電壓額定值(4.5V – 25V)的電源管理應用進行了優(yōu)化。 ?-40A, -30V\n?RDS(ON) = 20 mΩ @ VGS = -10V\n?RDS(ON) = 30 mΩ @ VGS = -4.5V\n?快速開關速度\n?高性能溝道技術可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力\n?符合 AEC Q101;

ONSEMI

安森美半導體

30V P-Channel PowerTrench? MOSFET

文件：187.48 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體