isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 52mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：353.74 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 150V, ID= 50 A RDS(ON)

文件：671.71 Kbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

N-Channel PowerTrench? MOSFET 150 V, 27 A, 52 m

文件：178.9 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道屏蔽門極 PowerTrench? MOSFET 150 V，27 A，52 mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 ? Shielded Gate MOSFET Technology\n?VGS = 10 V，ID = 5 A時，最大rDS(on) = 52 m? \n?VGS = 6 V，ID = 5 A時，最大rDS(on) = 72 m? \n?100%經(jīng)過UIL測試\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體