Integrated P-Channel PowerTrench MOSFET and Schottky Diode

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for mi

文件：307.08 Kbytes 頁數(shù)：7 Pages

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Integrated P-Channel PowerTrench? MOSFET and Schottky Diode

文件：251.5 Kbytes 頁數(shù)：7 Pages

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Integrated P-Channel PowerTrench? MOSFET and Schottky Diode

文件：841.07 Kbytes 頁數(shù)：7 Pages

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集成式 P 溝道 Power Trench? MOSFET 和肖特基二極管 -20V，-3.0A，120mΩ

該器件專門設(shè)計為單封裝解決方案，適合手機和其他超便攜應(yīng)用的電池充電開關(guān)。 該器件具有一個低導(dǎo)通阻抗的MOSFET和一個獨立連接的低正向電壓肖特基二極管，以最大限度地降低傳導(dǎo)損耗。MicroFET 2x2封裝雖然體積小巧，卻能提供出色的熱性能，非常適合線性模式應(yīng)用。 ?-3.0 A，-20V。\n?RDS(ON) = 120 mΩ @ VGS = -4.5 V\n?RDS(ON) = 160 mΩ @ VGS = -2.5 V\n?RDS(ON) = 240 mΩ（VGS = -1.8 V時）肖特基：VF < 0.46 V (500 mA)\n?薄型 - 0.8mm最大值 - 采用新封裝MicroFET 2x2 mm\n?符合 RoHS 標(biāo)準(zhǔn);

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Integrated P-Channel PowerTrench? MOSFET and Schottky Diode

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for mi

文件：357.06 Kbytes 頁數(shù)：8 Pages

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Integrated P-Channel PowerTrench? MOSFET and Schottky Diode

文件：251.5 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

Integrated P-Channel PowerTrench? MOSFET and Schottky Diode

文件：841.07 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體