TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS ? Low voltage, high frequency rectifier ? Freewheeling circuit and protection circuit of low voltage ? solar cell junction box as a bypass diode FEATURES ?Low power loss, high efficiency ?High Operating Junction Temperature ?High reliability ?RoHS product

文件：448.54 Kbytes 頁數(shù)：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

Very low gate charge

Description This device is an N-channel Power MOSFET developed using the STripFET? H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance RDS(on) ? Very low gate charge ? High avalanche ruggednes

文件：947.74 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

絲印：260N4F7；Package：PowerFLAT；N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：850.58 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.182 typ., 20 A, MDmeshTM DM2 Power MOSFET in a PowerFLAT? 8x8 HV package

Features ? Fast-recovery body diode ? Extremely low gate charge and input capacitance ? Low on-resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh? DM2 fastrecovery diode series.

文件：385.79 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

文件：697.79 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導體

絲印：L27N15；Package：PowerFLAT；N-CHANNEL 150V - 0.045 W - 27A PowerFLAT LOW GATE CHARGE STripFET MOSFET

■ TYPICAL RDS(on) = 0.045 ? ■ IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm MAX) ■ VERY LOW THERMAL RESISTANCE ■ VERY LOW GATE CHARGE DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize inpu

文件：132.48 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/285n4f7/marking.html">285N4F7；Package：PowerFLAT；Automotive-grade N-channel 40 V, 0.9 mΩ typ., 120 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ? Designed for automotive applications and AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package Applications ? Switching applications Descripti

文件：942.7 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

N-channel 600 V, 0.155 typ., 21 A MDmeshTM DM2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ? Fast-recovery body diode ? Extremely low gate charge and input capacitance ? Low on-resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode seri

文件：758.08 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

N-channel 600 V, 0.140 typ., 19 A MDmeshTM M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

文件：824.76 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

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N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET?” technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT? package allows a significant reduction in board space without compromising performance

文件：117.35 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導體