絲?。?a target="_blank" title="Marking" href="/12n3l/marking.html">12N3L；Package：PowerFLAT；N-channel 30 V, 0.0079 廓, 12 A, PowerFLAT??(3.3 x 3.3) STripFET??V Power MOSFET

Description The STL12N3LLH5 is a 30 V N-channel STripFET? V. This Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Features ■ RDS(on) * Qg i

文件：453.1 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 390 m typ., 6.4 A MDmeshTM M6 Power MOSFET in a PowerFLAT? 5x6 HV package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：798.28 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Very low intrinsic capacitance

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched am

文件：1.38052 Mbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Low gate input resistance

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is

文件：1.05303 Mbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：835.94 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 30 V - 0.0014 廓 - 35 A - PowerFLAT??(6x5) STripFET??V Power MOSFET

Description This STripFET?V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Hig

文件：502.65 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 295 m typ., 8.5 A, MDmesh DM6 Power MOSFET in a PowerFLAT 5x6 HV package

Features ? Fast-recovery body diode ? Lower RDS(on) per area vs previous generation ? Low gate charge, input capacitance and resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：579.45 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 30 V, 0.0011 廓, 35 A PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET? DeepGATE? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance

文件：781.07 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/160n4f7/marking.html">160N4F7；Package：PowerFLAT；N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：861.08 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/165n10f8/marking.html">165N10F8；Automotive N?channel 100 V, 3.2 m? max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features ? AEC-Q101 qualified ? MSL1 grade ? 175 °C maximum operating junction temperature ? 100% avalanche tested ? Low gate charge Qg ? Wettable flank package Applications ? Automotive motor control ? Electro mobility Description The STL165N10F8AG is a 100 V N-channel enhancem

文件：940.53 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體