Automotive N-channel 40 V, 1.35 m typ., 120 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced t

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STDRIVE102BH evaluation board for three-phase brushless motors

Features ? Operating voltage from 6 V to 50 V ? Output current up to 12 Arms: power stage based on STL220N6F7 60 V, 1.2 mΩ N-channel power MOSFETs ? Three-shunt configuration ? STDRIVE102BH triple half-bridge gate driver: – Programmable gate current (up to 1 A source / 2 A sink) – Charge pu

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絲?。?a target="_blank" title="Marking" href="/220ns6f7/marking.html">220NS6F7；Package：PowerFLAT；N-channel 60 V, 1.4 mΩ typ., 250 A STripFET? F7 Power MOSFET plus monolithic Schottky in a PowerFLAT? 5x6

Features ? Among the lowest RDS(on) on the market ? Excellent figure of merit (FoM) ? Embedded Schottky diode ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET? F7 technol

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Automotive-grade N-channel 60 V, 1.2 m typ., 120 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced

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N-channel 600 V, 220 m typ., 13 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features ? Fast-recovery body diode ? Lower RDS(on) per area vs previous generation ? Low gate charge, input capacitance and resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

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N-channel 600 V, 220 m typ., 10 A, MDmeshTM M6 Power MOSFET in a PowerFLAT? 5x6 HV package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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Low gate input resistance

Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high po

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N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT??LOW GATE CHARGE STripFET??II MOSFET

DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique STripFET? technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT? package allows a significant reduction in board space without compro

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絲印：24N60M2；Package：PowerFLAT；N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package

Description This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency co

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N-channel 600 V, 0.175 typ., 15 A, MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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