SOFT-TERMINAL

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MSYSTEM

愛模

絲?。?a target="_blank" title="Marking" href="/100n3llh6/marking.html">100N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT? (5x6)STripFET? VI DeepGATE? Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This product utilizes the 6th generation of design rules

文件：564.91 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/100n3llh7/marking.html">100N3LLH7；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT? (5x6) STripFET? VII DeepGATE? Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness Application ■ Switching applications Description This device utilizes the 7th generation of design rules of ST’s proprietary STripFET? technology, with a new gate structure. Th

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STMICROELECTRONICS

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N-channel logic level 40 V, 2.7 mΩ max., 103 A, STripFET F8 Power MOSFET in a PowerFLAT 3.3x3.3 package

Features ? MSL1 grade ? 150 °C operating temperature ? 100% avalanche tested ? Low gate charge Qg Applications ? Industrial tools, motor drives and equipment ? Industrial motor control ? Power supplies and converters Description The STL100N4LF8 is a 40 V N-channel enhancement mod

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STMICROELECTRONICS

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絲印：105DN4L；Package：PowerFLAT；Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 DI

Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package Applications ? Switching applications Description This N-channel Power MOSFET utilizes

文件：965.86 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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絲印：105N4LF7；Package：PowerFLAT；Automotive-grade N-channel 40 V, 3.0 mΩ typ., 105 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package Applications ? Switching applications Description This N-channel Power MOSFET utilizes

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STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/10ln80k5/marking.html">10LN80K5；Package：PowerFLAT；N-channel 800 V, 0.59 Ω typ., 6 A MDmesh? K5 Power MOSFET in a PowerFLAT? 5x6 VHV package

Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

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STMICROELECTRONICS

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絲印：10N60M2；Package：PowerFLAT；N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

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STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 550 m typ., 5.5 A, MDmeshTM M6 Power MOSFET in a PowerFLAT? 5x6 HV package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：793.18 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件：796.98 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體