| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Automotive-grade N-channel 40 V, 3.3 mΩ typ., 108 A STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure tha 文件：937.61 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive-grade N-channel 100 V, 5 m typ., 107 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure tha 文件：945.85 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive-grade N-channel 40 V, 2.5 m typ., 119 A STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced 文件：412.66 Kbytes 頁(yè)數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/11n60m2e/marking.html">11N60M2E；Package：PowerFLAT；N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh? M2 EP Power MOSFET in a PowerFLAT? 5x6 HV package Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? Very low turn-off switching losses ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh? M2 enhan 文件：618.25 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：11N65M5；Package：PowerFLAT；N-channel 650 V, 0.475 ??typ., 8.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??5x5 package Description This device is an N-channel Power MOSFET based on MDmesh? M5 innovative vertical process technology combined with the wellknown PowerMESH? horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high po 文件：1.04176 Mbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
600W Outdoor UPS Systems Features ?Weatherproof (IP65), UV resistant, outdoor enclosures ?Powered from AC mains power and/or Solar ?Interior space for customer electronics ?Wall or Pole Mounting ?Isolates Customer Equipment from Power Line Surges ?High Quality AGM Sealed Lead Acid Batteries ?Advanced battery charge 文件：228.99 Kbytes 頁(yè)數(shù)：2 Pages | TYCONSYSTEMS | TYCONSYSTEMS | ||
絲?。?a target="_blank" title="Marking" href="/120n10f8/marking.html">120N10F8；Package：PowerFLAT；N?channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package Features ? MSL1 grade ? 175 °C operating temperature ? 100 avalanche tested Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing 文件：633.49 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design 文件：425.38 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design 文件：425.38 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：12N10；Package：PowerFLAT；N-channel 100 V, 11.3 mΩ typ., 12 A STripFET? F7 Power MOSFET in a PowerFLAT? 3.3x3.3 package Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench 文件：587.15 Kbytes 頁(yè)數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- 特性：
高CV值，長(zhǎng)壽命品，超小型.高度為5mm～9mm，105 ℃ 3000～5000小時(shí)
- 使用溫度范圍：
-40～+105℃
- 穩(wěn)定電壓：
6.3～50
- 標(biāo)準(zhǔn)容量：
1～1000
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
1650+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
Richco |
新 |
24 |
全新原裝 貨期兩周 |
詢價(jià) | |||
ST |
2022+ |
3440 |
全新原裝 貨期兩周 |
詢價(jià) | |||
ST |
2016+ |
POWERFL |
1800 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
ST/意法 |
24+ |
QFN10 |
30000 |
房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談 |
詢價(jià) | ||
ST |
22+ |
8PowerSMD Flat Leads |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
ST/意法 |
23+ |
TSSOP56 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ST |
QFP |
1000 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
ST/意法半導(dǎo)體 |
25+ |
PowerFLAT-3.3x3.3-8 |
10000 |
原裝公司現(xiàn)貨 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
23+ |
8-PowerVDFN |
12700 |
買原裝認(rèn)準(zhǔn)中賽美 |
詢價(jià) |
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