N-channel 600 V, 0.30 typ., 8 A MDmesh? M6 Power MOSFET in a PowerFLAT? 5x6 HV package

Features ? Reduced switching losses ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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N-channel 600 V, 300 m typ., 10 A, MDmeshTM M6 Power MOSFET in a PowerFLAT? 8x8 HV package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：580.24 Kbytes 頁數(shù)：15 Pages

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絲?。?a target="_blank" title="Marking" href="/18n60m2/marking.html">18N60M2；Package：PowerFLAT；N-channel 600 V, 0.278 廓 typ., 9 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency co

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N-channel 600 V, 255 m typ., 9 A, MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：792.39 Kbytes 頁數(shù)：15 Pages

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Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFETTM H6 Power MOSFET in a PowerFLAT 5x6 package

Features ? AEC-Q101 qualified ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss ? Logic level ? Wettable flank package Description This device is an N-channel Power MOSFET developed using the STripFET? H6 technology with a new trenc

文件：659.65 Kbytes 頁數(shù)：14 Pages

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N-channel 600 V, 255 m typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：575.02 Kbytes 頁數(shù)：14 Pages

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絲印：200N45F7；Package：PowerFLAT；N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench

文件：892.51 Kbytes 頁數(shù)：14 Pages

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絲印：20NF20；Package：PowerFLAT；N-channel 200 V, 0.10 Ω, 15 A PowerFLAT? (5x6) low gate charge STripFET? Power MOSFET

Features ■ Exceptional dv/dt capability ■ Low gate charge ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate c

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絲?。?a target="_blank" title="Marking" href="/l20nm20n/marking.html">L20NM20N；Package：PowerFLAT；N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET

General Features ■ WORLDWIDE LOWEST GATE CHARGE ■ TYPICAL RDS(on) = 0.088? ■ IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm MAX) ■ VERY LOW THERMAL RESISTANCE ■ LOW GATE RESISTANCE ■ LOW INPUT CAPACITANCE ■ HIGH dv/dt and AVALANCHE CAPABILITIES DESCRIPTION This 200V MO

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Automotive-grade N-channel 40 V, 1.3 m typ., 120 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ? Designed for automotive applications and AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent figure of merit (FoM) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package Description This N-channel Power MOSFET utilizes

文件：913.85 Kbytes 頁數(shù)：14 Pages

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