| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power ? Designed for application in fiber-optic networks ? Laser diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary photodiode at rear mirror for monitoring and control of radiant power ? Hermetically 文件:129.58 Kbytes 頁數(shù):4 Pages | SIEMENS 西門子 | SIEMENS | ||
1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power ? Designed for application in fiber-optic networks ? Laser diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary photodiode at rear mirror for monitoring and control of radiant power ? Hermetically 文件:129.58 Kbytes 頁數(shù):4 Pages | SIEMENS 西門子 | SIEMENS | ||
1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power ? Designed for application in fiber-optic networks ? Laser diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary photodiode at rear mirror for monitoring and control of radiant power ? Hermetically 文件:129.58 Kbytes 頁數(shù):4 Pages | SIEMENS 西門子 | SIEMENS | ||
1300 nm Laser in Receptacle Package, Low Power 1300 nm Laser in Receptacle Package, Low Power ? Designed for application in fiber-optic networks ? Laser diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary photodiode at rear mirror for monitoring and control of radiant power ? Hermetically sealed subco 文件:80.26 Kbytes 頁數(shù):4 Pages | SIEMENS 西門子 | SIEMENS | ||
Automotive-grade dual N-channel 40 V, 9 mΩ typ., 18 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 DI Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced 文件:1.01814 Mbytes 頁數(shù):16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 650 V, 0.061 廓 typ., 22.5 A MDmesh??V Power MOSFET in a PowerFLAT??8x8 HV package Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am 文件:1.06852 Mbytes 頁數(shù):16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印:58N3LH5;Package:PowerFLAT;Automotive-grade N-channel 30 V, 0.0076 ??typ., 56 A STripFET??H5 Power MOSFET in a PowerFLAT??5x6 package Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET? H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Features ? Designed for automotive applicatio 文件:711.04 Kbytes 頁數(shù):16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT??Zener-Protected SuperMESH??ower MOSFET DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri 文件:119.87 Kbytes 頁數(shù):6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/60n10f7/marking.html">60N10F7;Package:PowerFLAT;N-channel 100 V, 0.0145 ??typ., 12 A, STripFET??VII DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package Description This device is an N-channel Power MOSFET developed using the 7th generation of STripFET? DeepGATE? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ? Ultra low on-resistance ? 100 avalanche tested Appli 文件:1.2922 Mbytes 頁數(shù):16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/60n32n3ll/marking.html">60N32N3LL;Package:PowerFLAT;Dual N-channel 30 V, 0.005 廓, 15 A PowerFLAT??5x6 asymmetrical double island, STripFET??Power MOSFET Description This device is a dual N-channel Power MOSFET which utilizes the latest generation of design rules for ST's proprietary STripFET? V and STripFET? VI DeepGATE? technology. The lowest available RDS(on)* Qg in this chip scale package renders the device suitable for the most demandin 文件:1.42618 Mbytes 頁數(shù):14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- 特性:
高CV值,長壽命品,超小型.高度為5mm~9mm,105 ℃ 3000~5000小時(shí)
- 使用溫度范圍:
-40~+105℃
- 穩(wěn)定電壓:
6.3~50
- 標(biāo)準(zhǔn)容量:
1~1000
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STM |
2018+ |
26976 |
代理原裝現(xiàn)貨/特價(jià)熱賣! |
詢價(jià) | |||
ST |
SOP24 |
11+ |
5000 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量多可發(fā)貨 |
詢價(jià) | ||
ST |
專業(yè)鐵帽 |
PLCC44 |
67500 |
鐵帽原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
ST |
23+ |
SSOP28 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
ST |
2022+ |
30000 |
優(yōu)勢(shì)渠道原裝現(xiàn)貨 |
詢價(jià) | |||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢價(jià) | ||
INFINEON |
22+ |
8000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | |||
ST |
21+ |
MSOP8 |
1500 |
只做原裝,絕對(duì)現(xiàn)貨,原廠代理商渠道,歡迎電話微信查 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
23+ |
8-PowerVDFN |
12700 |
買原裝認(rèn)準(zhǔn)中賽美 |
詢價(jià) | ||
ST |
24+ |
QFP |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) |
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