絲?。?strong>260N4F7；Package：TO-220FP；N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET? F7 Power MOSFET in a TO-220FP package

Features ? Among the lowest RDS(on) on the market ? Excellent figure of merit (FoM) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trenc

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絲印：260N4F7；Package：TO-220FP；N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET? F7 Power MOSFET in a TO-220FP ultra narrow leads package

Features ? Among the lowest RDS(on) on the market ? Excellent figure of merit (FoM) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trenc

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絲印：260N4F7；Package：PowerFLAT；N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

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絲印：260N4F7；Package：TO-220；N-channel 40 V, 1.8 mΩ typ., 120 A STripFET? F7 Power MOSFET in a TO-220 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trenc

文件：683.86 Kbytes 頁數(shù)：13 Pages

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