| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/60n3llh5/marking.html">60N3LLH5；Package：PowerFLAT；N-channel 30 V, 0.0063 ?? 17 A PowerFLAT??(5x6) STripFET??V Power MOSFET Description This STripFET?V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resista 文件：587.16 Kbytes 頁(yè)數(shù)：12 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：60P4LLF6；Package：PowerFLA；P-channel 40 V, 0.0115 廓 typ.,60 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package Description This device is a P-channel Power MOSFET developed using the STripFET? F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? 文件：886.73 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：62P3LLH6；Package：PowerFLAT；P-channel -30 V, 9 m廓 typ., -62 A STripFET??H6 Power MOSFET in a PowerFLAT 5x6 package Description This device is a P-channel Power MOSFET developed using the STripFET? H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? 文件：1.17386 Mbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive-grade 40 V, 7.0 m typ., 64 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced 文件：406.04 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 550V - 1.2ohm- 5.2A PowerFLAT??Zener-Protected SuperMESH??ower MOSFET DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：215.77 Kbytes 頁(yè)數(shù)：8 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? Typical application (220V mains unless otherwise specified) ? Integrated antisaturation and protection network ? According to tube impedance 120V AC mains 277V AC mains 340V AC mains As PFC 220V AC mains Suffix D = Integrated free-wheeling diode ST preferred products in bol 文件：141.57 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? Typical application (220V mains unless otherwise specified) ? Integrated antisaturation and protection network ? According to tube impedance 120V AC mains 277V AC mains 340V AC mains As PFC 220V AC mains Suffix D = Integrated free-wheeling diode ST preferred products in bol 文件：141.57 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? Typical application (220V mains unless otherwise specified) ? Integrated antisaturation and protection network ? According to tube impedance 120V AC mains 277V AC mains 340V AC mains As PFC 220V AC mains Suffix D = Integrated free-wheeling diode ST preferred products in bol 文件：141.57 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is des 文件：141.52 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High voltage fast-switching NPN power transistor DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is 文件：138.13 Kbytes 頁(yè)數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- 特性：
高CV值，長(zhǎng)壽命品，超小型.高度為5mm～9mm，105 ℃ 3000～5000小時(shí)
- 使用溫度范圍：
-40～+105℃
- 穩(wěn)定電壓：
6.3～50
- 標(biāo)準(zhǔn)容量：
1～1000
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢價(jià) | ||
ST |
SOP24 |
11+ |
5000 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量多可發(fā)貨 |
詢價(jià) | ||
ST |
專業(yè)鐵帽 |
PLCC44 |
67500 |
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
STM |
2018+ |
26976 |
代理原裝現(xiàn)貨/特價(jià)熱賣! |
詢價(jià) | |||
ST |
2026+ |
SOP8 |
28899 |
進(jìn)口原帶現(xiàn)貨 |
詢價(jià) | ||
Richco |
25+ |
6 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中!! |
詢價(jià) | |||
INFINEON |
22+ |
8000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | |||
ST |
23+ |
SSOP28 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
ST |
2016+ |
POWERFL |
1800 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
STMicroelectronics |
24+ |
原廠原裝 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價(jià) |
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