| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/36dn6f7/marking.html">36DN6F7；Package：PowerFLAT；Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 double island package Features ? Among the lowest RDS(on) on the market ? Excellent figure of merit (FoM) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This dual N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced 文件：760.97 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive-grade N-channel 60 V, 24 m typ., 10 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 double island package Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that 文件：707.93 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
IRED in TO-Package IRED in TO-Package ? InGaAsP/InP - IRED ? Designed for application in fiber-optic ? Datacom systems ? Transmitter for the 2nd optical window (1300 nm) ? Suitable for bit rates up to 50 Mbit/s ? 200 Mbit/s with appropriate pulse shaping of the modulation current ? High output power with doub 文件：58.42 Kbytes 頁(yè)數(shù)：3 Pages | SIEMENS 西門(mén)子 | SIEMENS | ||
N-channel 650 V, 1.6 typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package Features ? Extremely low gate charge ? Excellent output capacitance (Coss) profile ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device 文件：318.61 Kbytes 頁(yè)數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/40c30h3l/marking.html">40C30H3L；Package：PowerFLAT；N-channel 30 V, 0.019 廓 typ., 10 A, P-channel 30 V, 0.024 廓 typ.,8 A STripFET??VI Power MOSFET in a PowerFLAT 5x6 d. i. package Description This device is a complementary N-channel and Pchannel Power MOSFET developed using STripFET? V (P-channel) and STripFET? VI DeepGATE? (N-channel) technologies. The resulting device exhibits low on-state resistance and an FOM among the lowest in its voltage class. Features ? R 文件：1.4399 Mbytes 頁(yè)數(shù)：19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：40DN3LLH5；Package：PowerFLAT5x6；Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET? V Power MOSFET in a PowerFLAT? 5x6 double island Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET? V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Features ■ RDS(on) * Qg industry benchmark ■ 文件：882.56 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 650 V, 0.070 廓, 34 A MDmesh??V Power MOSFET in PowerFLAT??8x8 HV package Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low onresistance, which is unmatche 文件：686.55 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/42p4llf6/marking.html">42P4LLF6；Package：PowerFLAT；P-channel 40 V, 0.0155 廓 typ.,42 A, STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package Description This device is a P-channel Power MOSFET developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness 文件：451.44 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/42p6llf6/marking.html">42P6LLF6；Package：PowerFLAT；P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package Description This device is a P-channel Power MOSFET developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness 文件：935.23 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc P-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=-42A@ TC=25℃ ·Drain Source Voltage- VDSS=- 60V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver·Power Tools ·UPS ·Motor Control 文件：376.42 Kbytes 頁(yè)數(shù)：3 Pages | ISC 無(wú)錫固電 | ISC |
技術(shù)參數(shù)
- 特性：
高CV值，長(zhǎng)壽命品，超小型.高度為5mm～9mm，105 ℃ 3000～5000小時(shí)
- 使用溫度范圍：
-40～+105℃
- 穩(wěn)定電壓：
6.3～50
- 標(biāo)準(zhǔn)容量：
1～1000
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
0831+ |
SOP8 |
28899 |
進(jìn)口原帶現(xiàn)貨 |
詢(xún)價(jià) | ||
STM |
2018+ |
26976 |
代理原裝現(xiàn)貨/特價(jià)熱賣(mài)! |
詢(xún)價(jià) | |||
NA |
23+ |
NA |
26094 |
10年以上分銷(xiāo)經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢(xún)價(jià) | ||
ST |
專(zhuān)業(yè)鐵帽 |
PLCC44 |
67500 |
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
STMicroelectronics |
24+ |
6-DFN-EP(2x2) |
66800 |
原廠授權(quán)一級(jí)代理,專(zhuān)注汽車(chē)、醫(yī)療、工業(yè)、新能源！ |
詢(xún)價(jià) | ||
ST |
2022+ |
30000 |
優(yōu)勢(shì)渠道原裝現(xiàn)貨 |
詢(xún)價(jià) | |||
Richco |
25+ |
6 |
公司優(yōu)勢(shì)庫(kù)存 熱賣(mài)中!! |
詢(xún)價(jià) | |||
STMicroelectronics |
24+ |
原廠原裝 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢(xún)價(jià) | ||
ST |
25+ |
DIP28 |
5366 |
⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢(xún)!⊙ |
詢(xún)價(jià) | ||
ST/意法 |
24+ |
QFN8 |
350000 |
實(shí)數(shù)庫(kù)存鄙視假貨 |
詢(xún)價(jià) |
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