| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package Description This device is a P-channel Power MOSFET developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness 文件:935.23 Kbytes 頁(yè)數(shù):16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印:APG40N10NF;Package:DFN5X6-8L;N-ChannelEnhancement Mode Field Effect Transistor Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification application 文件:1.90953 Mbytes 頁(yè)數(shù):6 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
Automotive-grade N-channel 100 V, 20 mΩ typ., 18 A, STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness ? Wettable flank package ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of m 文件:942.08 Kbytes 頁(yè)數(shù):15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/45n65m5/marking.html">45N65M5;Package:PowerFLAT;N-channel 650 V, 0.075 廓 typ., 22.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??8x8 HV package Description This device is an N-channel Power MOSFET based on the MDmesh? M5 innovative vertical process technology combined with the wellknown PowerMESH? horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring hig 文件:878.47 Kbytes 頁(yè)數(shù):16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印:45P3LLH6;Package:PowerFLAT;P-channel -30 V, 11 m廓 typ., -45 A STripFET??H6 Power MOSFET in a PowerFLAT??5x6 package Description This device is a P-channel Power MOSFET developed using the STripFET? H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? 文件:841.85 Kbytes 頁(yè)數(shù):15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
200Ah Lithium UPS Systems Features ? Solar Ready? ? 48V MPPT Charge Controller with 7 Port GigE PoE Switch. Ports can be configured for 802.3at or 24V Passive PoE. Remote Monitoring and Control. ? Weatherproof, UV resistant, outdoor enclosures ? Powered from AC mains power and/or Solar ? LFP (LiFePO4) Lithium Batterie 文件:293.29 Kbytes 頁(yè)數(shù):2 Pages | TYCONSYSTEMS | TYCONSYSTEMS | ||
600W Outdoor UPS Systems Features ? 48V Charge Controller with 7 Port GigE PoE Switch. Ports can be configured for 802.3at or 24V Passive PoE. Remote Monitoring and Control. ? Weatherproof, UV resistant, outdoor enclosures ? Powered from AC mains power and/or Solar ? Interior space for customer electronics ? Wall or 文件:248.02 Kbytes 頁(yè)數(shù):2 Pages | TYCONSYSTEMS | TYCONSYSTEMS | ||
絲?。?a target="_blank" title="Marking" href="/50n6f7/marking.html">50N6F7;Package:PowerFLAT;N-channel 60 V, 9 mΩ typ., 60 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package Features ? Among the lowest RDS(on) on the market ? Excellent figure of merit (FoM) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trenc 文件:866.72 Kbytes 頁(yè)數(shù):14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power ? Designed for application in fiber-optic networks ? Laser diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary photodiode at rear mirror for monitoring and control of radiant power ? Hermetically 文件:129.58 Kbytes 頁(yè)數(shù):4 Pages | SIEMENS 西門(mén)子 | SIEMENS | ||
1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power ? Designed for application in fiber-optic networks ? Laser diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary photodiode at rear mirror for monitoring and control of radiant power ? Hermetically 文件:129.58 Kbytes 頁(yè)數(shù):4 Pages | SIEMENS 西門(mén)子 | SIEMENS |
技術(shù)參數(shù)
- 特性:
高CV值,長(zhǎng)壽命品,超小型.高度為5mm~9mm,105 ℃ 3000~5000小時(shí)
- 使用溫度范圍:
-40~+105℃
- 穩(wěn)定電壓:
6.3~50
- 標(biāo)準(zhǔn)容量:
1~1000
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
SOP24 |
11+ |
5000 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量多可發(fā)貨 |
詢(xún)價(jià) | ||
STM |
2018+ |
26976 |
代理原裝現(xiàn)貨/特價(jià)熱賣(mài)! |
詢(xún)價(jià) | |||
ST |
專(zhuān)業(yè)鐵帽 |
PLCC44 |
67500 |
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
ST |
23+ |
SSOP28 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
ST |
2016+ |
POWERFL |
1800 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢(xún)價(jià) | ||
ST |
2022+ |
30000 |
優(yōu)勢(shì)渠道原裝現(xiàn)貨 |
詢(xún)價(jià) | |||
STMicroelectronics |
24+ |
原廠(chǎng)原裝 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢(xún)價(jià) | ||
INFINEON |
22+ |
8000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢(xún)價(jià) | |||
ST/意法半導(dǎo)體 |
23+ |
8-PowerVDFN |
12700 |
買(mǎi)原裝認(rèn)準(zhǔn)中賽美 |
詢(xún)價(jià) | ||
ST意法 |
25+ |
QFP64 |
3034 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) |
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