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    首頁(yè) >PHB>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    PHB44N06LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 44A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.33 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    PHB44N06T

    TrenchMOS transistor Standard level FET

    GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

    文件:69.19 Kbytes 頁(yè)數(shù):8 Pages

    PHI

    PHI

    PHI

    PHB45N03LT

    TrenchMOS transistor Logic level FET

    GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB45N03LT is suppl

    文件:61.45 Kbytes 頁(yè)數(shù):8 Pages

    PHI

    PHI

    PHI

    PHB45N03LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 21mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.1 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    PHB45N03LT

    N-Channel 30-V (D-S) MOSFET

    FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

    文件:1.01496 Mbytes 頁(yè)數(shù):8 Pages

    VBSEMI

    微碧半導(dǎo)體

    PHB45N03LTA

    N-Channel 30-V (D-S) MOSFET

    FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU ??????? APPLICATIONS ? OR-ing ? Server ? DC/DC

    文件:1.01488 Mbytes 頁(yè)數(shù):8 Pages

    VBSEMI

    微碧半導(dǎo)體

    PHB45N03LTA

    N-channel enhancement mode field-effect transistor

    Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS?1 technology. Product availability: PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast swit

    文件:298.65 Kbytes 頁(yè)數(shù):14 Pages

    PHI

    PHI

    PHI

    PHB45N03T

    TrenchMOS transistor Standard level FET

    GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

    文件:66.18 Kbytes 頁(yè)數(shù):8 Pages

    PHI

    PHI

    PHI

    PHB45N03T

    N-Channel 30-V (D-S) MOSFET

    FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

    文件:1.01485 Mbytes 頁(yè)數(shù):8 Pages

    VBSEMI

    微碧半導(dǎo)體

    PHB45NQ10T

    N-channel TrenchMOS standard level FET

    1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits ?

    文件:865.31 Kbytes 頁(yè)數(shù):12 Pages

    NEXPERIA

    安世

    技術(shù)參數(shù)

    • Package name:

      D2PAK

    • Product status:

      Production

    • Channel type:

      N

    • Nr of transistors:

      1

    • VDS [max] (V):

      75

    • RDSon [max] @ VGS = 10 V (mΩ):

      9

    • Tj [max] (°C):

      175

    • ID [max] (A):

      75

    • QGD [typ] (nC):

      48.2

    • QG(tot) [typ] @ VGS = 10 V (nC):

      113.1

    • Ptot [max] (W):

      230

    • Qr [typ] (nC):

      270

    • VGSth [typ] (V):

      3

    • Automotive qualified:

      N

    • Ciss [typ] (pF):

      4860

    • Coss [typ] (pF):

      840

    • Release date:

      2011-01-05

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    PHI
    22+
    TO-263
    5000
    全新原裝現(xiàn)貨!自家?guī)齑?
    詢(xún)價(jià)
    PHI
    23+
    TO263
    66600
    專(zhuān)業(yè)芯片配單原裝正品假一罰十
    詢(xún)價(jià)
    PHI
    24+
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    PHI
    17+
    TO252
    9888
    只做原裝,現(xiàn)貨庫(kù)存
    詢(xún)價(jià)
    恩XP
    23+
    TO-263
    11846
    一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
    詢(xún)價(jià)
    PHI
    23+24
    TO-263
    29840
    主營(yíng)MOS管,二極.三極管,肖特基二極管.功率三極管
    詢(xún)價(jià)
    PHL
    23+
    TO263
    3265
    全新原裝正品現(xiàn)貨,支持訂貨
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    PHI
    25+
    TO-263
    4439
    旗艦店
    詢(xún)價(jià)
    PHI
    25+
    SMD
    2789
    全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢(shì)!
    詢(xún)價(jià)
    恩XP
    23+
    TO-263
    12000
    詢(xún)價(jià)
    更多PHB供應(yīng)商 更新時(shí)間2026-1-22 16:10:00

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