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    首頁 >PHB>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    PHB-4U-EE-SN-1A-NS

    Short Stroke Pushbutton Switches

    Features/Benefits ? Momentary or latching action ? Low cost, reliable contact design ? 2 & 4 pole configurations ? Sealed contacts ? Optional buttons ? RoHS compliant design Typical Applications ? Computers and peripherals ? Instrumentation and measurement equipment ? Non-power, on-o

    文件:394.13 Kbytes 頁數(shù):3 Pages

    CK-COMPONENTS

    力特

    PHB-4U-EE-TS1A-NS

    Short Stroke Pushbutton Switches

    Features/Benefits ? Momentary or latching action ? Low cost, reliable contact design ? 2 & 4 pole configurations ? Sealed contacts ? Optional buttons ? RoHS compliant design Typical Applications ? Computers and peripherals ? Instrumentation and measurement equipment ? Non-power, on-o

    文件:394.13 Kbytes 頁數(shù):3 Pages

    CK-COMPONENTS

    力特

    PHB-4U-OASN-1A-NS

    Short Stroke Pushbutton Switches

    Features/Benefits ? Momentary or latching action ? Low cost, reliable contact design ? 2 & 4 pole configurations ? Sealed contacts ? Optional buttons ? RoHS compliant design Typical Applications ? Computers and peripherals ? Instrumentation and measurement equipment ? Non-power, on-o

    文件:394.13 Kbytes 頁數(shù):3 Pages

    CK-COMPONENTS

    力特

    PHB-4U-OATS1A-NS

    Short Stroke Pushbutton Switches

    Features/Benefits ? Momentary or latching action ? Low cost, reliable contact design ? 2 & 4 pole configurations ? Sealed contacts ? Optional buttons ? RoHS compliant design Typical Applications ? Computers and peripherals ? Instrumentation and measurement equipment ? Non-power, on-o

    文件:394.13 Kbytes 頁數(shù):3 Pages

    CK-COMPONENTS

    力特

    PHB50N03

    N-channel TrenchMOS transistor Logic level FET

    GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Very low on-state resistance ? Fast switching ? High thermal cycling performance ? Low thermal resistance ? Logic level

    文件:108.76 Kbytes 頁數(shù):11 Pages

    PHI

    PHI

    PHI

    PHB50N03

    TrenchMOS transistor Standard level FET

    GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

    文件:63.66 Kbytes 頁數(shù):7 Pages

    PHI

    PHI

    PHI

    PHB50N03LT

    N-channel TrenchMOS transistor Logic level FET

    GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Very low on-state resistance ? Fast switching ? High thermal cycling performance ? Low thermal resistance ? Logic level

    文件:108.76 Kbytes 頁數(shù):11 Pages

    PHI

    PHI

    PHI

    PHB50N03LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.71 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB50N03T

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 21mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.81 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB50N03T

    TrenchMOS transistor Standard level FET

    GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

    文件:63.66 Kbytes 頁數(shù):7 Pages

    PHI

    PHI

    PHI

    技術(shù)參數(shù)

    • Package name:

      D2PAK

    • Product status:

      Production

    • Channel type:

      N

    • Nr of transistors:

      1

    • VDS [max] (V):

      75

    • RDSon [max] @ VGS = 10 V (mΩ):

      9

    • Tj [max] (°C):

      175

    • ID [max] (A):

      75

    • QGD [typ] (nC):

      48.2

    • QG(tot) [typ] @ VGS = 10 V (nC):

      113.1

    • Ptot [max] (W):

      230

    • Qr [typ] (nC):

      270

    • VGSth [typ] (V):

      3

    • Automotive qualified:

      N

    • Ciss [typ] (pF):

      4860

    • Coss [typ] (pF):

      840

    • Release date:

      2011-01-05

    供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
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    全新原裝數(shù)量均有多電話咨詢
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    2023+
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    更多PHB供應(yīng)商 更新時(shí)間2026-1-22 17:07:00

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