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    首頁 >PHB>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    PHB55N03LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.4 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB55N03LTA

    N-channel enhancement mode field-effect transistor

    Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS?1 technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching.

    文件:296.3 Kbytes 頁數(shù):14 Pages

    PHI

    PHI

    PHI

    PHB55N03T

    TrenchMOS transistor Standard level FET

    GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

    文件:63.5 Kbytes 頁數(shù):8 Pages

    PHI

    PHI

    PHI

    PHB55N03T

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.88 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB60N06LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.78 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB60N06LT

    TrenchMOS transistor Logic level FET

    GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP60N06LT is su

    文件:71.01 Kbytes 頁數(shù):9 Pages

    PHI

    PHI

    PHI

    PHB60N06T

    TrenchMOS transistor Standard level FET

    GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

    文件:68.52 Kbytes 頁數(shù):8 Pages

    PHI

    PHI

    PHI

    PHB60N06T

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.13 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB63NQ03LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 66A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.54 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB63NQ03LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 69A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.44 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    技術(shù)參數(shù)

    • Package name:

      D2PAK

    • Product status:

      Production

    • Channel type:

      N

    • Nr of transistors:

      1

    • VDS [max] (V):

      75

    • RDSon [max] @ VGS = 10 V (mΩ):

      9

    • Tj [max] (°C):

      175

    • ID [max] (A):

      75

    • QGD [typ] (nC):

      48.2

    • QG(tot) [typ] @ VGS = 10 V (nC):

      113.1

    • Ptot [max] (W):

      230

    • Qr [typ] (nC):

      270

    • VGSth [typ] (V):

      3

    • Automotive qualified:

      N

    • Ciss [typ] (pF):

      4860

    • Coss [typ] (pF):

      840

    • Release date:

      2011-01-05

    供應(yīng)商型號品牌批號封裝庫存備注價格
    PH
    07+
    BGA
    17
    詢價
    PHI
    25+
    TO252-2.5
    18000
    原廠直接發(fā)貨進口原裝
    詢價
    24+
    3000
    公司存貨
    詢價
    PHI
    23+
    TO263
    7000
    絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
    詢價
    PHI
    05+
    原廠原裝
    32851
    只做全新原裝真實現(xiàn)貨供應(yīng)
    詢價
    恩XP
    12+
    TO-263
    15000
    全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
    詢價
    PHI
    25+
    TO-263
    157
    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    P
    23+
    TO-263
    5000
    原裝正品,假一罰十
    詢價
    PHI
    17+
    TO-263
    6200
    詢價
    PHI
    16+
    NA
    8800
    原裝現(xiàn)貨,貨真價優(yōu)
    詢價
    更多PHB供應(yīng)商 更新時間2026-1-22 9:01:00

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