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首頁 >PHB>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
PHB50N06	文件：55.73 Kbytes Page：8 Pages	TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP50N06LT is sup 文件：55.73 Kbytes 頁數(shù)：8 Pages	PHI PHI	PHI
PHB50N06	文件：69.19 Kbytes Page：8 Pages	TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended 文件：69.19 Kbytes 頁數(shù)：8 Pages	PHI PHI	PHI
PHB50N06LT	文件：343.84 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：343.84 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
PHB50N06LT	文件：80.78 Kbytes Page：10 Pages	TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP50N06LT is sup 文件：80.78 Kbytes 頁數(shù)：10 Pages	PHI PHI	PHI
PHB50N06LT	文件：55.73 Kbytes Page：8 Pages	TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP50N06LT is sup 文件：55.73 Kbytes 頁數(shù)：8 Pages	PHI PHI	PHI
PHB50N06T	文件：69.19 Kbytes Page：8 Pages	TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended 文件：69.19 Kbytes 頁數(shù)：8 Pages	PHI PHI	PHI
PHB50N06T	文件：343.84 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：343.84 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
PHB55N03	文件：63.5 Kbytes Page：8 Pages	TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended 文件：63.5 Kbytes 頁數(shù)：8 Pages	PHI PHI	PHI
PHB55N03	文件：107.39 Kbytes Page：11 Pages	N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’technology ? Very low on-state resistance ? Fast switching ? Low thermal resistance ? Logic level compatible Appl 文件：107.39 Kbytes 頁數(shù)：11 Pages	PHI PHI	PHI
PHB55N03LT	文件：107.39 Kbytes Page：11 Pages	N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’technology ? Very low on-state resistance ? Fast switching ? Low thermal resistance ? Logic level compatible Appl 文件：107.39 Kbytes 頁數(shù)：11 Pages	PHI PHI	PHI

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技術(shù)參數(shù)

Package name：
D2PAK
Product status：
Production
Channel type：
N
Nr of transistors：
1
VDS [max] (V)：
75
RDSon [max] @ VGS = 10 V (mΩ)：
9
Tj [max] (°C)：
175
ID [max] (A)：
75
QGD [typ] (nC)：
48.2
QG(tot) [typ] @ VGS = 10 V (nC)：
113.1
Ptot [max] (W)：
230
Qr [typ] (nC)：
270
VGSth [typ] (V)：
3
Automotive qualified：
N
Ciss [typ] (pF)：
4860
Coss [typ] (pF)：
840
Release date：
2011-01-05

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市卓越微芯電子有限公司	PHB55N03LTA	PHI	25+	TO-263	157	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	PHB55N03LTA	PHI	22+	TO-263	5000	全新原裝現(xiàn)貨!自家?guī)齑?	詢價(jià)
上海鑫科潤電子科技有限公司	PHB50N03LT	PHI	01+	TO220	389	原裝現(xiàn)貨海量庫存歡迎咨詢	詢價(jià)
深圳市凌旭科技有限公司	PHB21N06LT	恩XP	2016+	TO-263	3000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	PHB55N03LTA	PHI	24+	TO-263	25000	一級(jí)專營品牌全新原裝熱賣	詢價(jià)
深圳和潤天下電子科技有限公司	PHB27NQ10T,118	NEXPERIA/安世	SOT404	23+	48000	授權(quán)代理/原廠FAE技術(shù)支持	詢價(jià)
深圳市華來深電子有限公司	PHB9NQ20T	恩XP	23+	TO-263	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市粵駿騰電子科技有限公司	PHB25201T-2R2JS/PSB25201T2R2JSR	乾坤	24+	2520	10952	全新原裝數(shù)量均有多電話咨詢	詢價(jià)
深圳市博中泰實(shí)業(yè)有限公司	PHB96NQ03LT低壓MOS管	VBSEMI/臺(tái)灣微碧	24+	D2-PAK	60000		詢價(jià)
深圳市柯爾基電子有限公司	PHB45N03LTA	PHI	23+24	TO-263	29840	主營MOS管,二極.三極管,肖特基二極管.功率三極管	詢價(jià)

更多PHB供應(yīng)商更新時(shí)間2026-1-22 17:07:00

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