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    首頁(yè) >PHB>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    PHB29N08T

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.48 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    PHB2N50

    PowerMOS transistor

    GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended

    文件:59.95 Kbytes 頁(yè)數(shù):7 Pages

    PHI

    PHI

    PHI

    PHB2N50E

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.33 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    PHB2N50E

    PowerMOS transistors Avalanche energy rated

    GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N50E is supplied

    文件:75.26 Kbytes 頁(yè)數(shù):10 Pages

    PHI

    PHI

    PHI

    PHB2N60E

    PowerMOS transistors Avalanche energy rated

    GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied

    文件:94.74 Kbytes 頁(yè)數(shù):10 Pages

    PHI

    PHI

    PHI

    PHB2N60E

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.95 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    PHB-2UEE-SN-1A-NS

    Short Stroke Pushbutton Switches

    Features/Benefits ? Momentary or latching action ? Low cost, reliable contact design ? 2 & 4 pole configurations ? Sealed contacts ? Optional buttons ? RoHS compliant design Typical Applications ? Computers and peripherals ? Instrumentation and measurement equipment ? Non-power, on-o

    文件:394.13 Kbytes 頁(yè)數(shù):3 Pages

    CK-COMPONENTS

    力特

    PHB-2UEE-TS1A-NS

    Short Stroke Pushbutton Switches

    Features/Benefits ? Momentary or latching action ? Low cost, reliable contact design ? 2 & 4 pole configurations ? Sealed contacts ? Optional buttons ? RoHS compliant design Typical Applications ? Computers and peripherals ? Instrumentation and measurement equipment ? Non-power, on-o

    文件:394.13 Kbytes 頁(yè)數(shù):3 Pages

    CK-COMPONENTS

    力特

    PHB-2UOASN-1A-NS

    Short Stroke Pushbutton Switches

    Features/Benefits ? Momentary or latching action ? Low cost, reliable contact design ? 2 & 4 pole configurations ? Sealed contacts ? Optional buttons ? RoHS compliant design Typical Applications ? Computers and peripherals ? Instrumentation and measurement equipment ? Non-power, on-o

    文件:394.13 Kbytes 頁(yè)數(shù):3 Pages

    CK-COMPONENTS

    力特

    PHB-2UOATS1A-NS

    Short Stroke Pushbutton Switches

    Features/Benefits ? Momentary or latching action ? Low cost, reliable contact design ? 2 & 4 pole configurations ? Sealed contacts ? Optional buttons ? RoHS compliant design Typical Applications ? Computers and peripherals ? Instrumentation and measurement equipment ? Non-power, on-o

    文件:394.13 Kbytes 頁(yè)數(shù):3 Pages

    CK-COMPONENTS

    力特

    技術(shù)參數(shù)

    • Package name:

      D2PAK

    • Product status:

      Production

    • Channel type:

      N

    • Nr of transistors:

      1

    • VDS [max] (V):

      75

    • RDSon [max] @ VGS = 10 V (mΩ):

      9

    • Tj [max] (°C):

      175

    • ID [max] (A):

      75

    • QGD [typ] (nC):

      48.2

    • QG(tot) [typ] @ VGS = 10 V (nC):

      113.1

    • Ptot [max] (W):

      230

    • Qr [typ] (nC):

      270

    • VGSth [typ] (V):

      3

    • Automotive qualified:

      N

    • Ciss [typ] (pF):

      4860

    • Coss [typ] (pF):

      840

    • Release date:

      2011-01-05

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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    SOT404
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    2023+
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    24+
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    VBSEMI/臺(tái)灣微碧
    24+
    D2-PAK
    60000
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    更多PHB供應(yīng)商 更新時(shí)間2026-1-22 13:57:00

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