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    首頁(yè) >PHB>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    PHB34NQ10T

    N-channel TrenchMOS transistor

    GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance Applications:- ? d.c. to d.c. converters ? switched mode power s

    文件:115.79 Kbytes 頁(yè)數(shù):12 Pages

    PHI

    PHI

    PHI

    PHB34NQ10T

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.96 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    PHB36N06E

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 41A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 38mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.12 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    PHB36N06E

    PowerMOS transistor

    GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications.

    文件:55.06 Kbytes 頁(yè)數(shù):7 Pages

    PHI

    PHI

    PHI

    PHB37N06LT

    TrenchMOS transistor Logic level FET

    GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP37N06LT is sup

    文件:79.11 Kbytes 頁(yè)數(shù):10 Pages

    PHI

    PHI

    PHI

    PHB37N06LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 37A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 32mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.88 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    PHB37N06T

    TrenchMOS transistor Standard level FET

    GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

    文件:69.18 Kbytes 頁(yè)數(shù):8 Pages

    PHI

    PHI

    PHI

    PHB37N06T

    N-Channel 60 V (D-S) MOSFET

    FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Logic-Level Gate Drive ? Fast Switching ? Compliant to RoHS Directive 2002/95/EC

    文件:1.32096 Mbytes 頁(yè)數(shù):9 Pages

    VBSEMI

    微碧半導(dǎo)體

    PHB38N02LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.63 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    PHB38N02LT

    TrenchMOS logic level FET

    Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). Features ■ Low on-state resistance ■ 2.5 V gate drive. Applications ■ Linear regulator for

    文件:252.6 Kbytes 頁(yè)數(shù):13 Pages

    PHI

    PHI

    PHI

    技術(shù)參數(shù)

    • Package name:

      D2PAK

    • Product status:

      Production

    • Channel type:

      N

    • Nr of transistors:

      1

    • VDS [max] (V):

      75

    • RDSon [max] @ VGS = 10 V (mΩ):

      9

    • Tj [max] (°C):

      175

    • ID [max] (A):

      75

    • QGD [typ] (nC):

      48.2

    • QG(tot) [typ] @ VGS = 10 V (nC):

      113.1

    • Ptot [max] (W):

      230

    • Qr [typ] (nC):

      270

    • VGSth [typ] (V):

      3

    • Automotive qualified:

      N

    • Ciss [typ] (pF):

      4860

    • Coss [typ] (pF):

      840

    • Release date:

      2011-01-05

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    PHI
    25+
    TO-263
    157
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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    23+
    TO-263
    5000
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    2016+
    TO-263
    3000
    只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
    詢價(jià)
    NEXPERIA
    1728+
    ?
    6500
    只做原裝進(jìn)口,假一罰十
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    PHI
    23+
    TO263
    66600
    專業(yè)芯片配單原裝正品假一罰十
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    PHL
    23+
    TO263
    3265
    全新原裝正品現(xiàn)貨,支持訂貨
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    乾坤
    24+
    2520
    10952
    全新原裝數(shù)量均有多電話咨詢
    詢價(jià)
    PHI
    2023+
    SMD
    2668
    安羅世紀(jì)電子只做原裝正品貨
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    NK/南科功率
    2025+
    TO-252
    986966
    國(guó)產(chǎn)
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    PHI
    2023+
    TO-263
    5800
    進(jìn)口原裝,現(xiàn)貨熱賣
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    更多PHB供應(yīng)商 更新時(shí)間2026-1-22 17:07:00

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