N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS?1 technology. Product availability: PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast swit

文件：298.65 Kbytes 頁數(shù)：14 Pages

PHI

PHI

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU ??????? APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：1.01488 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

文件：66.18 Kbytes 頁數(shù)：8 Pages

PHI

PHI

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：1.01485 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 21mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.75 Kbytes 頁數(shù)：2 Pages

ISC

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