TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB45N03LT is suppl

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PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 21mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

無(wú)錫固電

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：1.01496 Mbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU ??????? APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：1.01488 Mbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS?1 technology. Product availability: PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast swit

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PHI

PHI

TrenchMOS? transistor Logic level FET

GENERAL DESCRIPTION\nN-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.\nThe PHB45N03LT is supplie ? ’Trench’ technology\n? Very low on-state resistance\n? Fast switching\n? Stable off-state characteristics\n? High thermal cycling performance\n? Low thermal resistance\n? Surface mounting package;

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