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    首頁 >PHB>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    PHB30NQ15T

    N-channel TrenchMOS transistor

    GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP30NQ15T is supplied in the S

    文件:98.02 Kbytes 頁數(shù):9 Pages

    PHI

    PHI

    PHI

    PHB30NQ15T

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 29A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.17 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB32N06LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.05 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB32N06LT

    N-channel TrenchMOS logic level FET

    1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suit

    文件:856.58 Kbytes 頁數(shù):11 Pages

    NEXPERIA

    安世

    PHB32N06LT

    N-channel enhancement mode field effect transistor

    Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS?1 technology. Features ■ TrenchMOS? technology ■ Logic level compatible. Applications ■ General purpose switching ■ Switched mode power supplies.

    文件:274.27 Kbytes 頁數(shù):13 Pages

    PHI

    PHI

    PHI

    PHB32N06LT

    N-channel TrenchMOS logic level FET

    General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Suitable for

    文件:376.57 Kbytes 頁數(shù):11 Pages

    恩XP

    恩XP

    PHB33NQ20T

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 33A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 77mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.39 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB33NQ20T

    N-channel TrenchMOS standard level FET

    General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Higher ope

    文件:191.06 Kbytes 頁數(shù):12 Pages

    恩XP

    恩XP

    PHB33NQ20T

    N-channel TrenchMOS??standard level FET

    General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS? technology. Features ■ Low on-state resistance ■ Fast switching ■ Low thermal resistance ■ Low gate charge. Applications ■ DC-to-DC primary side switching.

    文件:84.74 Kbytes 頁數(shù):13 Pages

    PHI

    PHI

    PHI

    PHB33NQ20T

    N-channel TrenchMOS standard level FET

    1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

    文件:687.24 Kbytes 頁數(shù):12 Pages

    NEXPERIA

    安世

    技術(shù)參數(shù)

    • Package name:

      D2PAK

    • Product status:

      Production

    • Channel type:

      N

    • Nr of transistors:

      1

    • VDS [max] (V):

      75

    • RDSon [max] @ VGS = 10 V (mΩ):

      9

    • Tj [max] (°C):

      175

    • ID [max] (A):

      75

    • QGD [typ] (nC):

      48.2

    • QG(tot) [typ] @ VGS = 10 V (nC):

      113.1

    • Ptot [max] (W):

      230

    • Qr [typ] (nC):

      270

    • VGSth [typ] (V):

      3

    • Automotive qualified:

      N

    • Ciss [typ] (pF):

      4860

    • Coss [typ] (pF):

      840

    • Release date:

      2011-01-05

    供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
    PH
    07+
    BGA
    17
    詢價(jià)
    PHI
    25+
    TO252-2.5
    18000
    原廠直接發(fā)貨進(jìn)口原裝
    詢價(jià)
    24+
    3000
    公司存貨
    詢價(jià)
    PHI
    23+
    TO263
    7000
    絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!
    詢價(jià)
    PHI
    05+
    原廠原裝
    32851
    只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
    詢價(jià)
    恩XP
    12+
    TO-263
    15000
    全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
    詢價(jià)
    PHI
    25+
    TO-263
    157
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價(jià)
    P
    23+
    TO-263
    5000
    原裝正品,假一罰十
    詢價(jià)
    PHI
    17+
    TO-263
    6200
    詢價(jià)
    PHI
    16+
    NA
    8800
    原裝現(xiàn)貨,貨真價(jià)優(yōu)
    詢價(jià)
    更多PHB供應(yīng)商 更新時(shí)間2026-1-22 9:01:00

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