| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFD214 | Power MOSFET VDS (V) 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes 文件:401.23 Kbytes 頁數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD214 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件:414.69 Kbytes 頁數(shù):9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD214 | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A) VDSS = 250V RDS(on) = 2.0? ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca 文件:497.6 Kbytes 頁數(shù):8 Pages | IRF | IRF | |
IRFD214 | Power MOSFET ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? For automatic insertion; | Vishay 威世 | Vishay | |
IRFD214 | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A) | Infineon 英飛凌 | Infineon | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件:414.69 Kbytes 頁數(shù):9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET VDSS = 250V RDS(on) = 2.0? ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca 文件:923.6 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
Power MOSFET VDS (V) 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes 文件:401.23 Kbytes 頁數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號:
IRFD214
- 功能描述:
MOSFET N-Chan 250V 0.45 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INTERNATIONA |
05+ |
原廠原裝 |
7016 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價 | ||
IOR |
24+ |
DIP-4P |
68 |
詢價 | |||
VISHAY |
25+ |
DIP-4 |
1675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價 | ||
IR-VISHAY |
11+ |
DIP4 |
19300 |
原裝現(xiàn)貨 |
詢價 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
22+ |
DIP-4 |
8000 |
原裝正品支持實(shí)單 |
詢價 | ||
Vishay Siliconix |
2022+ |
4-DIP(0.300 |
38550 |
詢價 | |||
INFINEON/英飛凌 |
23+ |
DIP-4 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
2700 |
安羅世紀(jì)電子只做原裝正品貨 |
詢價 | ||
IR |
23+ |
DIP-4 |
8000 |
只做原裝現(xiàn)貨 |
詢價 |
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