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          首頁 >IRFD224>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRFD224

          Power MOSFET

          VDS (V) 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

          文件:1.11815 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFD224

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic Insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

          文件:410.25 Kbytes 頁數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFD224

          Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=0.63A)

          VDSS = 250V RDS(on) = 1.1? ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

          文件:467.81 Kbytes 頁數(shù):8 Pages

          IRF

          IRFD224

          Power MOSFET

          ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? For automatic Insertion;

          Vishay

          威世

          IRFD224

          HEXFET power mosfet

          Description\nThird Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Isolated Package\nHigh Voltage Isolation = 2.5KVRMS\nSink to Lead Creepage Dist. 4.8mm\nLogic-Level

          Infineon

          英飛凌

          IRFD224_V01

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic Insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

          文件:410.25 Kbytes 頁數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFD224PBF

          HEXFET POWER MOSFET (VDSS = 250V , RDS(on) = 1.1廓 , ID = 0.63A)

          VDSS = 250V RDS(on) = 1.1? ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

          文件:918.17 Kbytes 頁數(shù):8 Pages

          IRF

          IRFD224PBF

          Power MOSFET

          VDS (V) 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

          文件:1.11815 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFD224PBF

          Power MOSFET

          文件:410.25 Kbytes 頁數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFD224PBF

          MOSFET N-Chan 250V 0.63 Amp

          Vishay

          威世

          詳細(xì)參數(shù)

          • 型號(hào):

            IRFD224

          • 功能描述:

            MOSFET N-CH 250V 630MA 4-DIP

          • RoHS:

          • 類別:

            分離式半導(dǎo)體產(chǎn)品 >> FET - 單

          • 系列:

            -

          • 標(biāo)準(zhǔn)包裝:

            1,000

          • 系列:

            MESH OVERLAY™ FET

          • 型:

            MOSFET N 通道,金屬氧化物 FET

          • 特點(diǎn):

            邏輯電平門

          • 漏極至源極電壓(Vdss):

            200V 電流 - 連續(xù)漏極(Id) @ 25°

          • C:

            18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

          • C:

            180 毫歐 @ 9A,10V Id 時(shí)的

          • Vgs(th)(最大):

            4V @ 250µA 閘電荷(Qg) @

          • Vgs:

            72nC @ 10V 輸入電容(Ciss) @

          • Vds:

            1560pF @ 25V 功率 -

          • 最大:

            40W

          • 安裝類型:

            通孔

          • 封裝/外殼:

            TO-220-3 整包

          • 供應(yīng)商設(shè)備封裝:

            TO-220FP

          • 包裝:

            管件

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          IR
          25+
          PLCC44
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          INTERNATIONA
          05+
          原廠原裝
          7816
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          IR
          23+
          DIP
          5000
          原裝正品,假一罰十
          詢價(jià)
          IOR
          24+
          DIP-4P
          52
          詢價(jià)
          IR
          25+23+
          DIP4
          73971
          絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          VISHAY
          25+
          DIP-4
          3675
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價(jià)
          IR-VISHAY
          11+
          DIP4
          19310
          原裝現(xiàn)貨
          詢價(jià)
          IR
          23+
          DIP-4
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          IR
          25+
          DIP-4
          10000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          Vishay Siliconix
          22+
          4DIP
          9000
          原廠渠道,現(xiàn)貨配單
          詢價(jià)
          更多IRFD224供應(yīng)商 更新時(shí)間2026-1-21 16:17:00
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