Power MOSFET

VDS (V) 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET? TRANSISTORS SURFACE MOUNT (LCC-18) The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers

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IRF

Simple Drive Requirements

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IRF

1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET

1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

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INTERSIL