| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFDC20 | Power MOSFET VDS (V) 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness 文件：1.06558 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFDC20 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件：413.4 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFDC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A) VDSS = 600V RDS(on) = 4.4? ID = 0.32A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca 文件：464.77 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件：413.4 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET VDS (V) 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness 文件：1.06558 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：413.4 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
IRFDC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A) | Infineon 英飛凌 | Infineon |
詳細(xì)參數(shù)
- 型號：
IRFDC20
- 功能描述：
MOSFET N-Chan 600V 0.32 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VishayIR |
24+ |
4-DIP |
1600 |
詢價 | |||
IR |
2022+ |
78 |
全新原裝 貨期兩周 |
詢價 | |||
VISHAY |
25+ |
DIP-4 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Vishay Siliconix |
2022+ |
4-DIP(0.300 |
38550 |
詢價 | |||
IR |
23+ |
DIP-4 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
DIP-4 |
7000 |
詢價 | |||
VishayPCS |
新 |
878 |
全新原裝 貨期兩周 |
詢價 | |||
SILICONIXVISHAY |
24+ |
NA |
7500 |
原裝現(xiàn)貨,專業(yè)配單專家 |
詢價 | ||
VISHAY(威世) |
2447 |
DIP-4 |
115000 |
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 |
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