Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? P-channel ? 175 °C operating temperature ? Fast switching ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

文件：264.3 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in? multiple co

文件：1.031079 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：265.55 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS P-CHANNEL -50 Volt, 0.20 Ohm HEXFET

文件：238.31 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

文件：1.20947 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

文件：4.08678 Mbytes 頁數(shù)：8 Pages

KERSEMI