| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFD320 | 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Description This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such 文件：50.28 Kbytes 頁數(shù)：6 Pages | INTERSIL | INTERSIL | |
IRFD320 | Power MOSFET VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 文件：1.16878 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD320 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件：415.3 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD320 | Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A) VDSS = 400V RDS(on) = 1.8? ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca 文件：478.9 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRFD320 | Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A) | Infineon 英飛凌 | Infineon | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件：415.3 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 文件：1.16878 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=1.8廓 , ID=0.49A ) VDSS = 400V RDS(on) = 1.8? ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca 文件：937.39 Kbytes 頁數(shù)：8 Pages | IRF | IRF |
詳細(xì)參數(shù)
- 型號：
IRFD320
- 功能描述：
MOSFET N-Chan 400V 0.49 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
2021+ |
DIP-4 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價(jià) |
詢價(jià) | ||
IR |
2015+ |
TO220F |
19889 |
一級代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
05+ |
原廠原裝 |
4346 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
IR |
23+ |
DIP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IOR |
24+ |
DIP-4P |
62 |
詢價(jià) | |||
IR |
24+ |
原廠封裝 |
2200 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
17+ |
DIP-4 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
NA |
869 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IR |
25+ |
DIP04 |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢 |
詢價(jià) |
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