Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

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VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

HEXFET Power MOSFET ● Dynamic dV/dt Rating ● Repetitive Avalanche Rated ● For Automatic Insertion ● End Stackable ● P-Channel ● Fast Switching ● Ease of Paralleling ● Lead-Free

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IRF

MOSFET P-CH -200V HEXFET MOSFET

Vishay

威世

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need to increase circuit board density. International Re

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IRF

Simple Drive Requirements

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IRF

-2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs

-2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for appl

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INTERSIL