60V, N-CHANNEL

The HEXFET? technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also f

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IRF

N-Channel MOSFET in a Hermetically sealed TO39

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SEME-LAB

60V, N-CHANNEL

Infineon

英飛凌

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)

VDSS = 55V RDS(on) = 0.075? ID = 2.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

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IRF

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)

VDSS = 55V RDS(on) = 0.075? ID = 2.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

文件：110.16 Kbytes 頁數(shù)：8 Pages

IRF

Advanced Process Technology

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IRF