| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFD310 | Power MOSFET VDS (V) 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness 文件：1.25725 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD310 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件：528.38 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD310 | 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件：50.87 Kbytes 頁數(shù)：6 Pages | INTERSIL | INTERSIL | |
IRFD310 | Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A) VDSS = 400V RDS(on) = 3.6? ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca 文件：459.85 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRFD310 | Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A) | Infineon 英飛凌 | Infineon | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件：528.38 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET? Power MOSFET VDSS = 400V RDS(on) = 3.6? ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca 文件：1.12454 Mbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET VDS (V) 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness 文件：1.25725 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFD310
- 功能描述：
MOSFET N-Chan 400V 0.35 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
06+ |
DIP-4 |
5000 |
全新原裝 絕對有貨 |
詢價 | ||
IR |
23+ |
DIP |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IOR |
24+ |
DIP-4P |
70 |
詢價 | |||
VISHAY |
25+ |
DIP-4 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IR-VISHAY |
11+ |
DIP4 |
19312 |
原裝現(xiàn)貨 |
詢價 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
ir |
25+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
Vishay Siliconix |
2022+ |
4-DIP(0.300 |
38550 |
詢價 | |||
IR |
23+ |
DIP |
8000 |
只做原裝現(xiàn)貨 |
詢價 |
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