| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFD9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP 文件：1.45559 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD9210 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? P-channel ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFETs technolo 文件：797.73 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A) DESCRIPTION The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power HEXFET design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. ? D 文件：171.48 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRFD9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A) | Infineon 英飛凌 | Infineon | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? P-channel ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFETs technolo 文件：797.73 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP 文件：1.45559 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET DESCRIPTION The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power HEXFET design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. ? D 文件：1.75197 Mbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET 文件：797.73 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFD9210
- 功能描述：
MOSFET P-Chan 200V 0.4 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
05+ |
DIP-4 |
3000 |
全新原裝 絕對有貨 |
詢價 | ||
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
23+ |
DIP |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IOR |
24+ |
DIP-4P |
80 |
詢價 | |||
IR |
24+ |
原廠封裝 |
1445 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
IR |
23+ |
HD-1 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
IR |
23+ |
NA |
14155 |
專做原裝正品,假一罰百! |
詢價 | ||
IR/VISH |
24+ |
65230 |
詢價 | ||||
原廠 |
25+ |
IC |
1 |
普通 |
詢價 |
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