8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

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INTERSIL

Nanosecond Switching speeds

文件：48.41 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Pulse Transformer with Single Secondary Winding

文件：126.5 Kbytes 頁數(shù)：4 Pages

SCHAFFNER

夏弗納

HIGH POWER LATCHING RELAY

Application Notes 1. It is possible that during transit or final assembly the relay could change state. Therefore, it is recommended that all relays be set to the desired state via a power supply. 2. In order to maintain an “Open” or “Closed” state of the relay, the coil voltage should reach th

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KG

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B. FEATURES ? Low current (max. 100 mA) ? Low voltage (max. 45 V). APPLICATIONS ? General purpose switching and amplification.

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PHI

PHI