| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a 文件：2.087889 Mbytes 頁數(shù)：6 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7311/marking.html">IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET General Description 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and The is the highest performance trench Product requirement with full function reliability a 文件：2.21333 Mbytes 頁數(shù)：6 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?a target="_blank" title="Marking" href="/irf7311/marking.html">IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a 文件：2.087889 Mbytes 頁數(shù)：6 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7313/marking.html">IRF7313；Package：SOP-8；Dual N Channel MOSFET Features VDs(V=30V RpsoN) 文件：361.14 Kbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印：IRF7316；Package：SOP-8；Dual P-Channel MOSFET Features ? Vbs(v)=-30V ? Roson) 文件：392.68 Kbytes 頁數(shù)：7 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7316/marking.html">IRF7316；Package：SOP-8；Dual P-Channel MOSFET Features Vs (v)=-30V Rpson) 文件：364.15 Kbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印：IRF7316；Package：SOP-8；Dual P-Channel MOSFET Features ? Vbs(v)=-30V ? Roson) 文件：392.68 Kbytes 頁數(shù)：7 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7319/marking.html">IRF7319；Package：SOP-8；Dual N P Channel MOSFET Features N-Ch: e Vos(v)=30V ? Rosony) 文件：430.91 Kbytes 頁數(shù)：10 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7319/marking.html">IRF7319；Package：SOP-8；Dual N P Channel MOSFET Features N-Ch: e Vos(v)=30V ? Rosony) 文件：430.91 Kbytes 頁數(shù)：10 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7319/marking.html">IRF7319；Package：SOP-8；Dual N P Channel MOSFET Features N-Ch: Vos (v)=30V Rosoy(on) 文件：402.24 Kbytes 頁數(shù)：10 Pages | EVVOSEMI 翊歐 | EVVOSEMI |
技術(shù)參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
263 |
7000 |
詢價 | |||
IOR |
25+ |
SOP8 |
3000 |
強調(diào)現(xiàn)貨,隨時查詢! |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-220 |
55000 |
原裝正品現(xiàn)貨,誠信經(jīng)營。假一罰十 |
詢價 | ||
IR |
20+ |
SOP8 |
11520 |
特價全新原裝公司現(xiàn)貨 |
詢價 | ||
IR |
1516+ |
TO-220 |
30449 |
進口原管現(xiàn)貨/50 |
詢價 | ||
IR |
24+ |
SOT |
30617 |
主打XILINX品牌價格絕對優(yōu)勢 |
詢價 | ||
IR |
1902+ |
SOP-8 |
2734 |
代理品牌 |
詢價 | ||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 |
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