| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/irf7324/marking.html">IRF7324；Package：SOP-8；Dual P-Channel MOSFET ● Trench Technology ● Ultra Low On-Resistance ● Low Profile ( 文件：365.27 Kbytes 頁數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7324/marking.html">IRF7324；Package：SOP-8；Dual P-Channel MOSFET ● Trench Technology ● Ultra Low On-Resistance ● Low Profile ( 文件：365.27 Kbytes 頁數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲印：IRF7328；Package：SOP-8；Dual P-Channel 30 V (D-S) MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free Features 文件：402.14 Kbytes 頁數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7328/marking.html">IRF7328；Package：SOP-8；Dual P-Channel 30 V (D-S) MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free Features 文件：402.14 Kbytes 頁數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7328/marking.html">IRF7328；Package：SOP-8；Dual P-Channel 30 V (D-S) MOSFET Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free 文件：351.79 Kbytes 頁數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印：IRF7341；Package：SOP-8；Generation V Technology The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa 文件：379.66 Kbytes 頁數(shù)：7 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7341/marking.html">IRF7341；Package：SOP-8；MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board 文件：340.07 Kbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?a target="_blank" title="Marking" href="/irf7341/marking.html">IRF7341；Package：SOP-8；Generation V Technology The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa 文件：379.66 Kbytes 頁數(shù)：7 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
FAST THYRISTOR/ DIODE and MAGN-A-pak Power Modules THYRISTOR/ THYRISTOR 文件：241.57 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Simple Drive Requirements 文件：48.31 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
技術(shù)參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
263 |
7000 |
詢價(jià) | |||
IR |
1725+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
IR |
26+ |
SOP-8 |
86720 |
全新原裝正品價(jià)格最實(shí)惠 假一賠百 |
詢價(jià) | ||
ST |
22+ |
原廠原封 |
16900 |
電子元器件采購降本30%!原廠直采,砍掉中間差價(jià) |
詢價(jià) | ||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價(jià) | ||
Vishay |
23+ |
TO-18 |
12800 |
原裝正品代理商最優(yōu)惠價(jià)格 現(xiàn)貨或訂貨 |
詢價(jià) | ||
INFINEON |
21+ |
標(biāo)準(zhǔn)封裝 |
60 |
保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號 |
詢價(jià) | ||
IR |
20000 |
詢價(jià) |
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