絲?。?strong>IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

文件：3.58041 Mbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

絲?。?strong>IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

文件：1.48095 Mbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

絲印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

文件：3.58041 Mbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

絲?。?strong>IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

文件：1.48095 Mbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：171.24 Kbytes 頁數(shù)：10 Pages

IRF

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

文件：1.09618 Mbytes 頁數(shù)：10 Pages

KERSEMI

Advanced Process Technology

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HEXFET Power MOSFET

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IRF

Advanced Process Technology

文件：706.19 Kbytes 頁數(shù)：11 Pages

IRF

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；isc P-Channel MOSFET Transistor

文件：297.21 Kbytes 頁數(shù)：2 Pages

ISC

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