N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

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FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

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SAMSUNG

三星

DUAL MOSFET DRIVER

? Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds ? Output Supply Voltage Range up to 24 V ? Low Standby Power Dissipation description The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and vol

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TI

德州儀器

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS? process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

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IXYS

艾賽斯

High Power,High Speed Applications

DESCRIPTION ? Drain Current ID=40A@ TC=25℃ ? Drain Source Voltage- : VDSS= 60V(Min) ? Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) ? High Power,High Speed Applications APPLICATIONS ? Switching power supplies ? UPS ? Motor controls ? High energy pulse circuits.

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ISC

無(wú)錫固電

Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3

NJS

AVALANCHE ENERGY RATED N-CHANNEL POWER MOSFETS

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