1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power ? Designed for application in fiber-optic networks ? Laser diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary photodiode at rear mirror for monitoring and control of radiant power ? Hermetically

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SIEMENS

西門(mén)子

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power ? Designed for application in fiber-optic networks ? Laser diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary photodiode at rear mirror for monitoring and control of radiant power ? Hermetically

文件：129.41 Kbytes 頁(yè)數(shù)：4 Pages

SIEMENS

西門(mén)子

1550 nm Laser in Receptacle Package, Low Power

1550 nm Laser in Receptacle Package, Low Power ? Designed for applications in fiber optic networks ? Laser Diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary Photodiode at rear mirror for monitoring and control of radiant power ? Hermetically sealed subc

文件：550.88 Kbytes 頁(yè)數(shù)：4 Pages

SIEMENS

西門(mén)子

1550 nm Laser in Receptacle Package, Low Power

1550 nm Laser in Receptacle Package, Low Power ? Designed for applications in fiber optic networks ? Laser Diode with Multi-Quantum Well structure ? Suitable for bit rates up to 1 Gbit/s ? Ternary Photodiode at rear mirror for monitoring and control of radiant power ? Hermetically sealed subc

文件：550.88 Kbytes 頁(yè)數(shù)：4 Pages

SIEMENS

西門(mén)子

N-channel 650 V, 1 typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件：848.88 Kbytes 頁(yè)數(shù)：15 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/8n6lf3/marking.html">8N6LF3；Package：PowerFLAT；Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET? F3 Power MOSFET in a PowerFLAT? 5x6 package

Features ? AEC-Q101 qualified ? Logic level VGS(th) ? 175 °C maximum junction temperature ? 100 avalanche rated ? Wettable flank package Applications ? Switching applications Description This device is an N-channel Power MOSFET developed using STripFET? F3 technology. It is designed

文件：976.39 Kbytes 頁(yè)數(shù)：15 Pages

STMICROELECTRONICS

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絲印：8P4F6；Package：PowerFLAT；P-channel 40 V, 0.0175 廓 typ.,8 A, STripFET??F6 Power MOSFET in a PowerFLAT??3.3 x 3.3 package

Description This device is a P-channel Power MOSFET developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness

文件：372.48 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/90n10f7/marking.html">90N10F7；Package：PowerFLAT；N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/90n3llh6/marking.html">90N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0038 廓 typ., 24 A STripFET??VI DeepGATE?? Power MOSFET in PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET? DeepGATE? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ? RDS(on) * Qg industry benchmark ? Extremely low on-resistance

文件：725.82 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體