isc N-Channel MOSFET Transistor

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ISC

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N-channel 600 V, 0.150 廓, 19.5 A, FDmesh??II Power MOSFET (with fast diode) D?PAK, I?PAK, TO-220, TO-220FP, TO-247

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STMICROELECTRONICS

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N-channel 600 V - 0.150 廓 - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh??II Power MOSFET

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STMICROELECTRONICS

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N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP

These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal f The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nHigh dv/dt and avalanche capabilities;

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