isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.125Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages

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STMICROELECTRONICS

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N溝道600 V、0.108 Ohm典型值、26 A MDmesh M2功率MOSFET，TO-220FP封裝

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters ? Extremely low gate charge \n? Excellent output capacitance (COSS) profile \n? 100% avalanche tested \n? Zener-protected;

ST

意法半導(dǎo)體

N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages

文件：1.09215 Mbytes 頁(yè)數(shù)：20 Pages

STMICROELECTRONICS

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Extremely low gate charge

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STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages

文件：1.09215 Mbytes 頁(yè)數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體