絲?。?a target="_blank" title="Marking" href="/28nm60nd/marking.html">28NM60ND；Package：TO-220FP；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.67094 Mbytes 頁數(shù)：22 Pages

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isc N-Channel MOSFET Transistor

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N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package

These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal f Intrinsic fast-recovery body diode\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities;

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isc N-Channel MOSFET Transistor

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N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.67094 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導體

isc N-Channel MOSFET Transistor

文件：398.12 Kbytes 頁數(shù)：2 Pages

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