isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.13 Kbytes 頁數(shù)：2 Pages

ISC

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N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages

文件：1.0714 Mbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

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N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in TO-220FP package

These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab ? 100% avalanche tested\n? Extremely high dv/dt capability\n? Very low intrinsic capacitance? Improved diode reverse recovery characteristics\n? Zener-protected;

ST

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N-channel 600 V, 4 廓 typ., 0.6 A MDmesh??K3 Power MOSFET in a TO-92 package

文件：613.1 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.93 Kbytes 頁數(shù)：2 Pages

ISC

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N-Channel 650V (D-S) Power MOSFET

文件：980.48 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體