isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.4A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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絲?。?a target="_blank" title="Marking" href="/6n65k3/marking.html">6N65K3；Package：TO-220FP；N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

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STMICROELECTRONICS

意法半導(dǎo)體

N溝道650 V、1.1 Ohm典型值、5.4 A SuperMESH3(TM) 功率MOSFET，TO-220FP封裝

These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab ? 100% avalanche tested \n? Extremely high dv/dt capability \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Improved diode reverse recovery characteristics \n? Zener-protected;

ST

意法半導(dǎo)體

N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP narrow leads package

This SuperMESH3? Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for ? 100% avalanche tested\n? Extremely high dv/dt capability\n? Gate charge minimized? Very low intrinsic capacitance\n? Improved diode reverse recovery characteristics\n? Zener-protected;

ST

意法半導(dǎo)體